2N3866 2N3866a npn silicon high frequency transistor description: the central semiconductor 2N3866 and 2N3866a are silicon npn rf transistors, mounted in a hermetically sealed package, designed for high frequency amplifier and oscillator applications. marking: full part number maximum ratings: (t a =25c unless otherwise noted) symbol units collector-base voltage v cbo 55 v collector-emitter voltage v ceo 30 v emitter-base voltage v ebo 3.5 v continuous collector current i c 0.4 a continuous base current i b 2.0 a power dissipation (t c =25c) p d 5.0 w operating and storage junction temperature t j , t stg -65 to +200 c thermal resistance jc 35 c/w electrical characteristics: (t a =25c unless otherwise noted) symbol test conditions min max units i ceo v ce =28v 20 a i cev v ce =55v, v be(off) =1.5v 0.1 ma i cev v ce =30v, v be(off) =1.5v, t c =200c 5.0 ma i ebo v eb =3.5v 0.1 ma bv cer i c =5.0ma, r be =10 55 v bv cbo i c =500a 55 v bv ceo i c =5.0ma 30 v bv ebo i e =100a 3.5 v v ce(sat) i c =100ma, i b =20ma 1.0 v h fe v ce =5.0v, i c =50ma (2N3866) 10 200 h fe v ce =5.0v, i c =50ma (2N3866a) 25 200 h fe v ce =5.0v, i c =360ma 5.0 f t v ce =15v, i c =50ma, f=200mhz (2N3866) 500 mhz f t v ce =15v, i c =50ma, f=200mhz (2N3866a) 800 mhz c ob v cb =28v, i e =0, f=1.0mhz 3.0 pf g pe v cc =28v, p out =1.0w, f=400mhz (figure 1) 10 db v cc =28v, p out =1.0w, f=400mhz (figure 1) 45 % to-39 case r2 (15-september 2010) www.centralsemi.com
2N3866 2N3866a npn silicon high frequency transistor to-39 case - mechanical outline lead code: 1) emitter 2) base 3) collector marking: full part number figure 1. 400mhz test circuit www.centralsemi.com r2 (15-september 2010)
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